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T: Teilchenphysik

T 406: Halbleiterdetektoren IV

T 406.5: Vortrag

Donnerstag, 20. März 1997, 15:00–15:15, 223

Development of Readout Electronics for Pixel Detectors at CMS — •W. Karpinski, D. Albertz, W. Braunschweig, J. Breibach, D. Gräßel, R. Krais, Th. Kubicki, K. Lübelsmeyer, C. Rente, G. Pierschel, R. Siedling, O. Syben, F. Tenbusch, M. Toporowski, and W.J. Xiao — I. Physikalisches Institut, RWTH Aachen, Sommerfeldstr.14, 52074 Aachen

The architecture and first measurements on a pixel readout circuit in DMILL-technology consisting of 24×32 elements each with an area of 125 µm × 125 µm will be presented. Each pixel cell contains a preamplifier, comparator with individually adjustable threshold, flag register and analog storage cell. Each pair of columns is equipped with a twelve-bit buffer for time stamping. The peripheral control logic located on the chip allows simultaneous readout and data taking by reading out only those column pairs having at least one cell hit. The implementation of the same readout architecture in radiation hard (> 200Mrad) Honeywell GaAs-CHFET Technology and (> 20Mrad)Honeywell SOI CMOS Technology will be discussed.
The investigations are performed in close collaboration with the Paul Scherrer Institut (R. Horisberger) in Villigen/Switzerland.