Münster 1997 – wissenschaftliches Programm

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DF: Dielektrische Festkörper

DF III: HV III

DF III.1: Hauptvortrag

Donnerstag, 20. März 1997, 09:30–10:10, R2

Ferroelectric thin films for microsensors and microactuators — •Nava Setter — Laboratory of Ceramics, Swiss Federal Institute of Technology, EPFL, 1015 Lausanne, Switzerland

Ferroelectric thin films are of interest for applications in microelectronics (e.g. memories), and in micro engineering. In the latter area, ferroelectric films are particularly attractive in the field of microsensors and –actuators. The integration of these films onto silicon or other substrates is interesting for arrays of various components because batch fabrication is relatively inexpensive and may offer new possibilities of applications. The successful implementation of pyroelectric and piezoelectric thin films into microsystems depends on one hand on fruitful conceiving of functionally and commercially advantageous components and on the other hand on development of the processing science of ferroelectric films to such a level that reproducible high quality films in the desired composition, orientation, thickness and uniformity could be prepared, processed, structured and packaged. This in turn depends on the understanding of the basic properties of the films, their difference from bulk ceramics or single crystals, and on the understanding of film/substrate relationship.
In the last years, various piezoelectric and pyroelectric thin–film–based components and microsystems have been proposed, demonstrated and in some cases commercialized. A short survey of these devices will be given, with emphasis on the infra–red arrays, and the piezoelectric microactuators such as micromotors, microdeflectors and microdelivery systems studied in the author’s laboratory. The processing and the electrical characterisation of the films will be reported. A review of data related to the influence of various processing and structural parameters on the piezoelectric and pyroelectric properties of the film will be presented.