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HL: Halbleiterphysik
HL 11: Poster I
HL 11.14: Poster
Monday, March 17, 1997, 15:30–18:30, Z
P-i-n Diodes on CVD Diamond Films — •A.A. Melnikov1, A.M. Zaitsev2, P. Koidl3, W.R. Fahrner2, V.S. Varichenko1,2, and N.M. Penina4 — 1Belarussian State University, HEII Laboratory, Minsk 220050, Belarus — 2FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany — 3Fraunhofer Institute, Tullasstrasse 72, 79108 Freiburg, Germany — 4Belarussian State University, Department of Semiconductor Physics, Minsk 220050, Belarus
CVD diamond films have been characterised by cathodoluminescence and ESR revealing a relatively low amount of structural defects and nitrogen. P-i-n diodes have been fabricated thereon by boron and lithium ion implantation. The diodes show clear rectifying characteristics up to a temperature of 400∘C. The voltage of the direct current onset varies from 20 to 120 V depending on the i-gap width (1.5 to 12 microns). The electroluminescence of the diodes is dominated by the A-band at the room temperature. At 400∘C the A-band is completely depressed and the 575 nm nitrogen related centre is the only feature of the spectrum. The perspectives of high temperature CVD diamond film based light emitting diodes are discussed.