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Münster 1997 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 38: Implantation

HL 38.1: Vortrag

Freitag, 21. März 1997, 11:00–11:15, H2

Low-Temperature Doping of p-Type Czochralski Silicon by Hydrogen Plasma Treatment — •Dietmar Borchert1, Alexander Ulyashin2, Yuri Bumay2, Günter Grabosch1, Reinhart Job1, and Wolfgang Fahrner11FernUniversität Hagen, Bauelemente der Elektrotechnik, Postfach 940, 54084 Hagen — 2Belarussian State Polytechnical Academy, Skariny Av. 65, 220027, Minsk, Belarus

The results of one and two steps hydrogen plasma-assisted doping by thermal donors and the formation of p-n junctions in p-type Czochralski (Cz) silicon substrates at low temperatures (below 500C) are presented. The one step process was carried out by direct hydrogen plasma treatment at 400C and the two step one by hydrogen plasma treatment at lower temperatures and additional heat treatments at 400 - 450C. Spreading-resistance- and capacitance-voltage-measurements are used for the characterization of resistance and carrier profiles and the location of the p-n junction. The results are promising for a low temperature technology of a p-n junction formation in p-type Cz silicon.

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