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HL: Halbleiterphysik
HL 38: Implantation
HL 38.4: Vortrag
Freitag, 21. März 1997, 11:45–12:00, H2
Defect Production in Si Implanted with Oxygen Ions in MeV-range — •V.S. Varichenko1,2, A.A. Melnikov1, N.M. Kazyuchits1, P.I. Gajduk3, A.M. Zaitsev2, and W.R. Fahrner2 — 1Belarussian State University, HEII Laboratory, Minsk 220050, Belarus — 2FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany — 3Belarussian State University, Department of Radiophysics, Minsk 220050, Belarus
The spatial distribution of radiation defects in (111) oriented silicon subject to a polienergetic implantation of oxygen ions (8, 10.5, 11, 19.7 MeV ; dose of 1015 cm−2) has been investigated. Spreading resistance, optical reflectivity and cross-sectional TEM techniques have been used for this purpose. The depths of location of the damaged regions in the irradiated layer coincide well with the projected ranges of the ions calculated by the TRIM code. In contrast to this behavior the widths of these regions significantly exceed the theoretically predicted values. We explain this effect on the basis of ion track channeling and charge state fluctuations of the fast ions. The transformation of the secondary defects (rodlike defects, dislocation loops, stacking faults) formed by a high temperature annealing has been also studied.