Münster 1997 – scientific programme
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HL: Halbleiterphysik
HL 38: Implantation
HL 38.9: Talk
Friday, March 21, 1997, 13:00–13:15, H2
Diffusion of Nitrogen in Diamond Irradiated with High Energy Ions — •A.R. Filipp1, V.S. Varichenko1,2, and A.M. Zaitsev2 — 1Belarussian State University, HEII Laboratory, Minsk 220050, Belarus — 2FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany
Spatial distributions of nitrogen containing luminescence centers have been studied by cathodoluminescence in natural low nitrogen type IIa diamond irradiated with 69 MeV nickel and 82 MeV carbon ions. High temperature high pressure treatment at 2200∘C and 70 kbar has led to appearance of the nitrogen centers (the H3, N3, 575 nm) in the irradiated layers. The observed formation of these centers has been explained by the diffusion of nitrogen atoms through the latent ion tracks created by high energy ion irradiation. A mechanism of the diffusion is discussed.