Münster 1997 – scientific programme

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HL: Halbleiterphysik

HL II: HV II

HL II.1: Invited Talk

Monday, March 17, 1997, 14:30–15:15, H1

Resonant Optical Spectroscopy of Semiconductor Microstructures — •E.L. Ivchenko — A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia

Optical spectroscopy based on light reflection and transmission measurements, Raman scattering, polarized photoluminescence and four-wave mixing is a powerful tool to investigate the fine structure of exciton levels and excitonic kinetics in semiconductor microstructures. The efficiency of spectroscopic methods is demonstrated for excitons in various kinds of nanostructures: (i) exciton polaritons in short- and long-period multiple quantum wells, in particular in resonant Bragg and anti-Bragg structures, (ii) localized excitons in type-II GaAs/AlAs superlattices, (iii) excitons localized on anisotropic islands in type-I quantum wells, (iv) excitons confined in semiconductor nanocrystals, and (v) exciton polaritons in microcavities with embedded quantum wells or gratings of quantum wires. The exchange and Zeeman splittings are shown to be extremely sensitve to the structure geometry and the shape of the exciton envelope function.