Münster 1997 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

O: Oberflächenphysik

O 6: POSTER I

O 6.11: Poster

Monday, March 17, 1997, 14:15–15:45, AULA

New SiC(0001)3× 3 surface reconstruction observed by STM, LEED and AES — •Michail A. Kulakov, Harry E. Hoster, and B. Bullemer — Universit"at der Bundeswehr M"unchen, Fakult"at f"ur Elektrotechnik, Institut f"ur Physik, 85577 Neubiberg

The atomic structure of the 6H−SiC(0001)C surface has been studied in UHV by STM, LEED and AES. A number of different reconstructions could be reproducibly prepared in the UHV by annealing a sample under and without silicon flux at temperatures in the range 450-1400^∘C. One of them has been identified as SiC(0001)3× 3 structure. A geometrical model of this reconstruction has been proposed. In accordance to that, the unit cell consists of 10 atoms the bonding of which results in six dimers and three adatoms. The 6 and 9-atom rings surround unoccupied sites of outermost carbon atoms of the SiC substrate. Each unit cell contains five dangling bonds, three of which are associated with adatoms and are responsible for protrusions in STM-images, while the other two are associated with carbon atoms of the substrate.