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VA: Vakuumphysik und Vakuumtechnik
VA 3: Ausgasung, Passivierung
VA 3.4: Talk
Monday, March 17, 1997, 17:00–17:20, ZH
Room temperature growth and characterisation of SiO2 passivation layers by plasma enhanced evaporation in the UHV — •A. Strass, A. Fischer, W. Hansch, P. Bieringer, A. Neubecker, and I. Eisele — Institut f"ur Physik, ET9, Universit"at der Bundeswehr M"unchen, Werner-Heisenberg-Weg 39, D-85579 Neubiberg
Thin SiO2 films were deposited on Si(100) substrates by burning an electron arc in argon/oxygen atmosphere and by simultaneous evaporation of silicon (plasma enhanced evaporation) at room temperature in an UHV chamber that was developed and optimised for this process. The stoichiometric and optical properties of the films were investigated by Auger electron spectroscopy (AES), ellipsometry and Rutherford backscattering. Electrical characterisation was performed by I-V and C-V measurements on metal oxide semiconductor (MOS) structures. Breakdown voltages of up to 9 MV/cm make the oxide films very promising for passivation of electronic devices.