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Regensburg 1998 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 5: Ionenimplantation III

DS 5.4: Fachvortrag

Montag, 23. März 1998, 17:15–17:30, H 31

Ion Implantation in TiO2: Effect of the Oxidation State on the Lattice Site Occupation — •R. Fromknecht1, O. Meyer1, I. Khubeis2, and S. Massing11Forschungszentrum Karlsruhe, INFP, Postfach 3640, D-76021 Karlsruhe — 2Department of Physics, University of Jordan, Amman, Jordan

Ions with different oxidation states Hg(2), Sn(4), Sb(5), and Pb(4) were implanted in TiO2 (rutile) and their lattice site location was determined using Rutherford backscattering and channeling (RBS-C). The maximum solubility concentrations on Ti sites were about 5·1013/cm2 for Hg, 1·1015/cm2 for Sb and greater than 3·1015/cm2 for Sn. For Pb a value of 5·1013/cm2 was observed, although Pb should be insoluble as estimated from the solid solubility rules. The results cannot be explained by the size mismatch energy, as in the case of metals but seems to depend on the oxidation state. The non-substitutional fractions were larger for Hg and Sb, having a net charge on Ti sites. This behaviour is attributed to the formation of impurity-defect complexes, where it is electrostatically favourable for different defects to associate for charge compensation. Supersaturation is reached for Pb, where charge compensation is not required.

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