Regensburg 1998 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 7: Optische Eigenschaften I
DS 7.4: Fachvortrag
Dienstag, 24. März 1998, 12:00–12:15, H 31
Reversible moisture absorption in mixed-phase boron nitride thin films by spectroscopic ellipsometry — •Eva Franke1, M. Schubert1, J.-D. Hecht1, H. Neumann1, T. E. Tiewald2, J. A. Woollam2, J. Hahn3, and Th. Welzel3 — 1Institute of Surfacemodification, Permoserstra"se 15, D-04303 Leipzig, Germany — 2University of Nebraska, Lincoln, NE 68588, U.S.A. — 3Institute of Physics, Technical University Chemnitz, D-09107 Chemnitz
In-situ ellipsometry over the spectral range from 700 to 5000 cm−1 and 0.75 to 5 eV is used to determine the temperature dependence of as-grown hexagonal (h) and cubic (c) mixed-phase boron nitride (BN) thin film reflectivity spectra from room temperature to 600∘C. The ellipsometric data depend on the thin-film multilayer structure, the layer phase composition, the average orientation of the h-BN grain c-axes [1,2], and sample temperature. We identify a reversible process in which moisture is incorporated into the h-BN thin films. Depending on the growth conditions the h-BN thin films are porous and allow high absorption of moisture after venting. [1] E. Franke et al., J. Appl. Phys. 82, 2906(1997) [2] M. Schubert et al., Phys. Rev. B 56, (15. Nov. 1997)