Regensburg 1998 – scientific programme

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HL: Halbleiterphysik

HL 18: Hauptvortrag

HL 18.1: Invited Talk

Tuesday, March 24, 1998, 15:00–16:00, H1

Challenges in Predictive Process Simulation — •J. Dabrowski and H.-J. Müssig — Institute for Semiconductor Physics, Box 409, D-15204 Frankfurt (Oder), Germany

Within the next decade, Si devices will be 200 atoms long and 50 atoms deep. They will be printed 50 billions on a wafer at a time, and no more than 64 faulty devices can be tolerated. To achieve this and still gain profit, extreme control of atomistic processes is needed.

The purpose of this talk is to stimulate fundamental research by clarifying how the needs of CMOS technology match our physical knowledge. Prospective research subjects are identified and ranked from scientific as well as practical points of view [1]. Particular attention is paid to the role of parameter free (ab initio) numerical methods, since they are a source of unbiased and reliable physical information. The main areas of their possible technological influence are: (1) diffusion of dopants, (2) interaction of dopants with interfaces, (3) surface chemistry during metallization, (4) chemical reactions during etching. A hierarchy of models ranging from ab initio through model potentials and Monte Carlo simulations to continuum equations which are useful for practical simulations must be established.

[1] 182nd Heraeus-Seminar on “Challenges in Predictive Process Simulation” (ChiPPS’97), Wandlitz, Germany, August 1997. See the conference WWW pages at “http://www.ihp-ffo.de/chipps/97/chipps.html”.