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HL: Halbleiterphysik
HL 2: Poster I
HL 2.43: Poster
Montag, 23. März 1998, 10:30–19:00, A
Modulated thermal profiling of a mesa structure — •J. Bolte1, F. Niebisch1, D. Dietzel1, J. Pelzl1, P. Stelmaszyk2, A. Wieck2, and A. Majumdar3 — 1Institut für Experimentalphysik III, Ruhr-Universität, 44780 Bochum — 2Institut für Experimentalphysik VI, Ruhr-Universität, 44780 Bochum — 3Dept. Mech. Eng., University of California, Berkley, USA
The heat spots and the surface and subsurface thermal barriers of a mesa
device have been investigated by means of a photothermal microscope and a
thermally modulated force microscope. The home-made photothermal
microscope
relies on the optical reflection of a He-Ne-laser probe beam from the
periodically heated sample and offers a lateral resolution of about 10
microns. The resolution of the thermal near field microscope is about 100
nm.
Thermal barriers are imaged by heating the sample with a laser, heat spots
are visualised by heating with a modulated drain voltage. The heat
spot position and the temperature amplitude of the heat spot varies with
the
gate voltage VG. For VG = 0V the spot is located in the centre of
the
transistor pattern and shifts toward the drain as VG is varied towards
negative values. Simultaneously, the temperature amplitude increases
roughly
exponentially.
Work performed in the frame of the Graduiertenkolleg 384.