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HL: Halbleiterphysik

HL 21: Quantendr
ähte

HL 21.8: Talk

Tuesday, March 24, 1998, 17:45–18:00, H1

GaAs/AlGaAs quantum wire structures prepared by cleaved edge overgrowth technique — •L. Sorba, W. Wegscheider, M. Bichler, G. Schedelbeck, G. B"ohm, and G. Abstreiter — Walter Schottky Institut, Technische Universität München, Am Coulombwall, D-85748 Garching

GaAs/AlGaAs T-shaped quantum wire (QWR) structures were fabricated by the cleaved edge overgrowth technique. The QWRs were formed at the right angle intersection of [001] oriented quantum wells (QWs), with a single QW grown along the [110] direction. A linear p-n junction in the vicinity of the QWRs is created by Be-modulation doping of the QW structure grown along the [001] direction during the first molecular beam epitaxy (MBE) growth, followed by Si-doping of the single QW grown along the [110] direction. Confinement of the optical mode is achieved by a T-shaped optical waveguide formed by Al_0.5Ga_0.5As cladding layers. The electrical and optical properties of the diodes of different cavity lenghts were studied in pulsed and continuous mode operation as a function of temperature and magnetic field.