Regensburg 1998 – scientific programme
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HL: Halbleiterphysik
HL 24: Poster II
HL 24.68: Poster
Wednesday, March 25, 1998, 10:30–19:00, A
CVD deposition and 0 characterisation of highly conductive ZnO — •G. Heindel1,2,3, B. Hahn1,2,3, E. Griebl1,2,3, E. Pschorr-Schoberer1,2,3, M. Wörz1,2,3, and W. Gebhardt1,2,3 — 1Lst. Gebhardt — 2Universität Regensburg — 393040 Regensburg
Highly conductive polycristalline ZnO films have been deposited by metal organic chemical vapor phase epitaxy using dimethylzinc and tert. butanol as precursors. By varying the VI/II-ratio the films can either be grown highly orientated with smooth surfaces or textured with random orientation of the grains. The samples have excellent optical properties. The strong luminescence in the excitonic region consists mainly of excitons bound to neutral donors. No deep luminescence is detected.The layers have an intrinsic conductivity of 0.3 Ω cm and Hall- mobilities of 50-60 cm2/Vs at room temperature. Temperature dependent Hall-measurments show that influence of the grain boundaries on electrical properties of the polycrystalline layers is neglible. By adding triethylgallium and n-butylchloride as dopant sources,n+-ZnO layers with resistivities as low as 3*10−4 Ω cm were achieved. Using n-butylchloride the mobilities remained even at high-doping levels at 60 cm2/Vs.