Regensburg 1998 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 29: Transporteigenschaften
HL 29.8: Vortrag
Donnerstag, 26. März 1998, 12:15–12:30, H17
Electron mobility measurement in n-GaAs through geometrical magnetoresistance effect — •V. Novák1, J. Hirschinger2, W. Prettl2, F.-J. Niedernostheide2, M. Cukr3, and J. Oswald3 — 1Ústav pro elektrotechniku AVČR, Dolejškova 5, 182 02 Praha, Czech Republic — 2Institut für Angewandte und Experimentelle Physik, Universität Regensburg, 930 40 Regensburg — 3Fyzikální ústav AVČR, Cukrovarnická 10, 162 53 Praha, Czech Republic
Geometrical magnetoresistance effect is investigated in samples of n-GaAs epitaxial layers in regime of low temperature impurity breakdown. Hall mobility is obtained and compared with results of independent mobility measurements. Upon analysing the two values the dependence of Hall factor on normal magnetic field is deduced, showing significant influence of neutral impurity scattering inside the current filaments. The mobility in the filamentary regime are compared with the values of mobility obtained through the standard Hall technique in the non-filamentary pre-breakdown state. Effective screening of ionized impurity scattering is concluded in the postbreakdown regime.