Regensburg 1998 – scientific programme
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HL: Halbleiterphysik
HL 3: SiC
HL 3.1: Talk
Monday, March 23, 1998, 10:30–10:45, H16
Hydrogen passivation of silicon carbide by low energy ion implantation — •Norbert Achtziger1, Joachim Grillenberger1, Christian Hülsen1, Wolfgang Witthuhn1, Margareta K. Linnarsson2, Martin Janson2, and Bengt G. Svensson2 — 1Institut für Festkörperphysik, Universität Jena, Max-Wien-Platz 1, 07743 Jena — 2Royal Institute of Technology, Solid State Electronics, Electrum 229, S-16440 Kista-Stockholm
Ion implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in α-SiC. To avoid excessive damage and the resulting trapping of H [1], the implantation is performed with low energy (600 eV 2H2+). The 2H depth profile was analyzed by SIMS and the electrical properties by CV-profiling and admittance spectroscopy. The doping level of the untreated samples was around 5·1015 cm−3. In p-type SiC, 2H atoms diffuse up to 2 µm deep during room temperature implantation and strongly reduce the effective acceptor (B and Al) concentration in that region. With increasing implantation temperature, they diffuse through the whole epilayer (5µm thick), partially reduce the acceptor concentration and accumulate in the defect-rich substrate. In n-type SiC, the amount of incorporated 2H atoms is comparatively small and no electrical effect is detected.
[1] M.K. Linnarsson, J.P. Doyle and B.G.Svensson, Materials Research Society Symposia Proceedings 423, 625 (1996)