Regensburg 1998 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 4: Optische Eigenschaften I
HL 4.9: Vortrag
Montag, 23. März 1998, 12:30–12:45, H13
Modulation dark-field spectroscopy on spontaneously ordered (AlGa)InP — •M. Schubert1, T. Hofmann1, B. Reinl"ander1, Ines Pietzonka2, T. Sa"s2, and V. Gottschalch2 — 1Faculty of Physics and Geoscience, University Leipzig, Linnéstra"se 5, D-04103 Leipzig, Germany — 2Faculty of Chemistry and Mineralogy, Linnéstra"se 3, D-04103 Leipzig, Germany
We use a transmission and reflection dark-field modulation-spectroscopy technique to study and determine order-dependent critical point variations and anisotropy in spontaneously ordered AlGaInP [1]. In particular, we report a novel reflection technique to sense extremely small optical thin-film anisotropy. We study the influence of doping concentration on the order-induced changes of the normalized spin-orbit and crystal-field splitting parameters in metal-organic vapor phase epitaxial grown GaInP samples using diethylzinc as dopant [2]. [1] M. Schubert et al., Solid State Commun. 95, 723 (1995); Phys. Rev. B 54, 17616 (1996). [2] I. Pietzonka et al., Proceedings EW-MOVPE VII Berlin, A10 (1997).