Regensburg 1998 – scientific programme

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HL: Halbleiterphysik

HL 43: Quantenpunkte III

HL 43.10: Talk

Friday, March 27, 1998, 13:45–14:00, H1

Structure characterization of lateral patterning in layered semiconductor devices — •Gerd Tilo Baumbach — Fraunhofer Institut Zerstoerungsfreie Pruefverfahren Dresden, Fraunhofer Institut Zerstoerungsfreie Pruefverfahren Dresden, actual address: ESRF, BP 220, F-38043 Grenoble, France

Lateral periodic patterning of layered semiconductor devices (strained layers on off-oriented substrates, quantum wires and quantum dots) requires structure investigations for the physical understanding and the optimization of the sample fabrication. The paper reports the combination of X-ray reflection, symmetric and asymmetric X-ray diffraction and grazing incidence diffraction for the non-destructive characterization of 1. the grating shape, 2. interface correlation properties and 3. the residual lattice strain. We distinguish compositional and strain ordering in strained layer superlattices on off-oriented substrates, showing a remarkable lateral compositional periodicity. Further we give evidence for non-uniform strain relaxation in strained layer surface gratings and describe its dependency on the grating shape. For the first time we show the strain evolution in buried gratings after the steps of planar growth, etching of a surface grating and its subsequent burying.