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O: Oberflächenphysik

O 11: Poster (I)

O 11.71: Poster

Montag, 23. März 1998, 19:30–22:30, Bereich C

Measuring the electroadsorptive effect with HSGFET — •Martin B"ogner, Alexander Fuchs, Klaus Scharnagl, Ronny Winter, Theodor Doll, and Ignaz Eisele — Werner-Heisenberg-Weg 39 85577 Neubiberg

Gas sensing with Hybrid Suspended Gate FET (HSGFET) is based on the adsorption of the gas molecules on the sensitive layer deposited underneath the gate. It is found that there is a strong dependence of the adsorptivity of the layer (i.e. the amount of work function change due to gas exposure at its surface) and of the response times on the magnitude of the applied gate bias or in other words, on the magnitude of the electrical field across the sensitive layer and the air gap. This dependence is called the electroadsorptive effect. The unique ability of direct electrical sensitivity and response time modulation makes the HSGFET a very useful device not only with respect to the selective sensing of individual gases, but also to the analysis of gas mixtures. The electroadsorptive effect was measured with HSGFET that were exposed to several anorganic test gases using a 100 nm NiO film as sensitive layer. These measurement results will be presented at the meeting.