Regensburg 1998 – scientific programme
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O: Oberflächenphysik
O 34: Poster (II)
O 34.86: Poster
Thursday, March 26, 1998, 20:00–22:30, Bereich C
Nano-scale material deposition using STM — •Xiaoming Hu1,2 and Peter von Blanckenhagen1 — 1Forschungszentrum Karlsruhe, IMF I, Postfach 3640, 76021 Karlsruhe — 2on leave from the Institute of Physics, Chinese Academy of Sciences, Beijing
The generation of small metal clusters is of interest for the study of size dependent effects such as thermal stability and single electron tunneling effects. A Scanning tunneling microscope has been used to deposit nano-scale metal clusters by applying voltage pulses between the tip and sample junction. Aluminium clusters as small as 3 nm and as big as a few hundred nm can be created on a clean Si(111) surface in UHV. The voltage thresholds for Al deposition have been determined for a certain predefined tunneling condition of the STM. We found that Al clusters are stable on a clean Si(111) surface in UHV at room temperature. Deposition mechanism in terms of field evaporation, point contact and tip melting will be discussed in relation to results for Au/Si(111) cluster systems as described in the literature.