Regensburg 1998 – scientific programme

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SYB: Symposium Elastische und plastische Eingenschaften dünner Filme

SYB 1: Elastische und plastische Eingenschaften dünner Filme

SYB 1.3: Invited Talk

Wednesday, March 25, 1998, 15:00–15:30, H 32

Stress in Thin Film Electromigration — •K.N. Tu — Dept. of Materials Science & Engineering, UCLA, Los Angeles, CA 90095-1595, USA

Multilayered thin film circuits in microelectronic devices are confined in dielectric for insulation. The confinement produces mechanical stresses in the circuit. During device operation, the stress can enhance or retard electromigration. In reverse, electromigration can generate stress in a confined thin film and it can be utilized to produce controlled extrusion. The interaction between electrical force and mechanical force has been analyzed by using thermodynamic irreversible processes. The evolution of stress in a confined thin film stripe driven by electromigration will be discussed. The estimate of deformation potential and the electromigration behavior of Cu thin films will also be presented.