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SYE: Symposium Magnetoelektronik

SYE 1: Symposium Magnetoelektronik (SY E)

SYE 1.2: Hauptvortrag

Donnerstag, 26. März 1998, 10:00–10:30, H 16

Spin dependent tunneling and Coulomb blockade — •F. Petroff¹, J. Barnas¹, F. Fettar¹, P. Holody¹, S.F. Lee¹, J.-L. Maurice¹, L. Schelp¹, A. Vaures¹, A. Fert¹, R. Desmicht², and G. Faini² — ¹Unite mixte CNRS/Thomson-LCR, Domaine de Corbeville, 91404 Orsay, France — ²L2M-CNRS, B.P.107, 92225 Bagneux, France

Tunneling of electrons between ferromagnetic electrodes separated by a thin insulating spacer depends on the relative orientation of the magnetizations in the electrodes. In an applied magnetic field, it generates tunnel magnetoresistance (TMR). Other interesting effects, namely the Coulomb blockade and staircase, appear in nano-sized tunnel junctions. These phenomena are related to single electron quantum transport. We have investigated the interplay between spin tunneling, TMR and Coulomb blockade in double barrier magnetic tunnel junctions with intermediate stage on small metal clusters in the tunneling processes. Our experimental results have been obtained on macroscopic junctions (arrays of nano-junctions in parallel) and progress towards the magnetic single electron transistor will be presented. The theory developed to account for the influence of the magnetic configuration on charging effects (magneto-Coulomb phenomena) will also be presented.