Regensburg 1998 – scientific programme

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SYE: Symposium Magnetoelektronik

SYE 1: Symposium Magnetoelektronik (SY E)

SYE 1.3: Invited Talk

Thursday, March 26, 1998, 10:30–11:00, H 16

Spin-dependent transport in hybrid ferromagnet/semiconductor structures. — •P. Bruno¹, J. Wunderlich^2,1, A. Bournel¹, P. Dollfus¹, and P. Hesto¹ — ¹Institut d’Electronique Fondamentale, CNRS URA 22, Université Paris-Sud, Batiment 220, F-91405 Orsay, France — ²Institut f"ur Experimentelle und Angewandte Physik, Universit"at Regensburg, D-93040 Regensburg

Magnetoelectronics is a new field of science and technology in which magnetic materials and semiconductors (or insulators) are combined to form new materials and devices with new properties [1]. After a brief overview of the various systems that have been investigated so far and of the physical problems that are encountered, we shall focus onto two particular cases, which we have studied theoretically: the "resonant tunneling spin-valve" is a combination of the double barrier resonant tunneling diode and of the tunneling spin-valve, whereas the latter is a field effect transistor with ferromagnetic source and drain, in which the precession of the spins is controlled by a gate.

[1] Physics Today, April 1995, pp. 24-63. [2] P. Bruno and J. Wunderlich, submitted to J. App. Phys. [3] S. Datta and B. Das, Appl. Phys. Lett. 56 (1990), p. 665. [4] A. Bournel et al., Solid State Commun. 104 (1997), p. 85.