Regensburg 1998 – wissenschaftliches Programm
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SYE: Symposium Magnetoelektronik
SYE 1: Symposium Magnetoelektronik (SY E)
SYE 1.5: Hauptvortrag
Donnerstag, 26. März 1998, 11:30–12:00, H 16
Hybrid ferromagnet - semiconductor nonvolatile gates — •M. Johnson — Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375-5320, USA
A novel magnetoelectronic device is comprised of a micron scale high mobility semiconducting Hall cross and a single, electrically isolated,microstructured ferromagnetic film, F. Fabricated with one edge directly over the InAs/AlSb Hall cross, magnetic fringe fields from the edge of F have a large component Bz perpendicular to the plane of the semiconductor and generate a Hall voltage in the sensor arms of the Hall cross. The sign of the fringe field, as well as the sign of the output Hall voltage, is switched by reversing the in-plane magnetization of the ferromagnet. The highly inhomogeneous fringe fields at the edge of F can be characterized by studying the modulation of Hall voltage as a function of device size and symmetry. Room temperature output levels are high, the order of 0.1 V for 5 mA bias. Applications as a nonvolatile memory or logic gate are discussed.