Freiburg 1999 – wissenschaftliches Programm
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HK: Physik der Hadronen und Kerne
HK 14: Instrumentation und Anwendungen II
HK 14.6: Gruppenbericht
Montag, 22. März 1999, 18:15–18:30, F
Near-axis channeling radiation of 31 MeV electrons in silicon — •Rainer Kotthaus1, Gerd Buschhorn1, Matthias Rzepka1, Klaus Schmidt1, Peter Weinmann1, Jörg Freudenberg2, Harald Genz2, Victor Morokhovskii2, and Achim Richter2 — 1Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München — 2Institut für Kernphysik, Technische Universität Darmstadt, Schlossgartenstr. 9, D-64289 Darmstadt
The spectral-angular and the linear polarization properties of channeling radiation emitted by 30.8 MeV electrons incident on a 13µ m thick silicon crystal at small angles with respect to various major crystal axes have been investigated both experimentally at S-DALINAC and theoretically by potential model calculations. The transition from axial to planar channeling radiation properties is well described by a two-dimensional many-beam calculation based on a periodic string potential.
Channeling radiation of rotationally symmetric axes (e.g. the ⟨ 100 ⟩ axis) is not linearly polarized whereas radiation produced at axes of azimuthal asymmetry (e.g. the ⟨ 110 ⟩ axis) shows a small amount of linear polarization. At energies above the strongest planar channeling radiation lines coherent bremsstrahlung linearly polarized perpendicular to the polarization of the corresponding planar channeling radiation is observed and found to be well reproduced by the model calculations.