Münster 1999 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 1: Ionenimplantation I
DS 1.3: Fachvortrag
Montag, 22. März 1999, 10:00–10:15, PC 7
Experimental evidence for interstitial defects in the Rp/2 region of MeV-ion-implanted and annealed Si — •A. Peeva1, R. Koegler1, G. Brauer1, W. Skorupa1, and P. Werner2 — 1Forschungszentrum Rossendorf, Postfach 510119, 01314 Dresden — 2MPI für Mikrostrukturphysik, Weinberg 2, 06120 Halle (Saale)
Damage occurs in MeV-ion-implanted Si away from the projected ion range, Rp, mainly around Rp/2 after annealing at temperatures between 700 and 1000 ∘C. The only way to detect this damage is to decorate it with metals and to measure the metal distribution. Up to now no structural defects have been observed in the Rp/2 region by other analysis methods such as electron microscopy. It is mostly believed that excess of vacancies around Rp/2 getter metal impurities. However, by means of positron annihilation spectroscopy and cross section transmission electron microscopy no vacancy defects have been detected. In contrast, interstitial defects have been found in the Rp/2 region indicating a supersaturation of self-interstitials. Small agglomerates of self-interstitials are proposed to be the dominating gettering centers at the Rp/2 region. Such defects which remain after annealing at high temperatures are the result of an incomplete recombination of vacancies and self-interstitials because of their trapping and agglomeration.