Münster 1999 – scientific programme

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DS: Dünne Schichten

DS 33: Postersitzung

DS 33.39: Poster

Tuesday, March 23, 1999, 09:30–17:30, Aula

Nanoscale characterization and switching of ferroelectric thin films — •C. Harnagea, A. Pignolet, M. Alexe, K.M. Satyalakshmi, St. Senz, D. Hesse, and U. Gösele — Max-Planck-Institut für Mikrostrukturphysik Halle

Ferroelectric thin films are intensively investigated due to their possible applications to innovative integrated microelectronic devices such as ferroelectric non-volatile memories. The high integration in the todayś microeletronic devices requires their dimensions to be of the nanometric scale. A substantial improvement in the understanding of the behavior of nanoscale ferroelectric structures is therefore required.

In order to investigate the behavior of ferroelectric thin films at the nanoscale level, their electromechanical properties are studied using Scanning Force Microscopy (SFM). The local ferroelectric polarization state is evidenced at the nano-scale level measuring the piezoresponse of the films. Ferroelectric properties of various Bi-based layer-structured thin films grown by pulsed laser deposition have been measured at the nanoscale level. In particular ferroelectric domain structures and local piezoelectric hysteresis loops have been obtained from different regions of samples showing different crystallographic orientations and surface morphologies. The influence of the microstructure on local ferroelectric properties will be discussed.