Münster 1999 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
DS: Dünne Schichten
DS 33: Postersitzung
DS 33.47: Poster
Tuesday, March 23, 1999, 09:30–17:30, Aula
Solid Phase Reaction of Co on Si/Si1−xGex/Si Heterostructures — •Ingolf Rau, Stefan Schwendler, Dilip Kumar Sarkar, Meiken Falke, Gunter Beddies, Steffen Teichert, and Hans-J"urgen Hinneberg — Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
Si/Si1−xGex heterostructures have significant potential for use in electronic devices such as heterojunction bipolar devices (HBT’s), modulation doped field effect transistors (MODFET’s) or resonant tunneling diodes (RTD’s)[1]. For such applications thermally stable and reliable contacts like highly conductive CoSi2 layers gain more and more interests. In the this study results on solid phase reactions of molecular beam deposited Co on Si/Si1−xGex/Si heterostructures of various compositions x are presented. Rutherford backscattering spectrometry, X-ray diffraction and reflectivity as well as conductivity measurements were performed to characterize the samples.
[1] D.J. Paul, Thin Solid Films, 321 (1998) 172.