Münster 1999 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 12: Poster I
HL 12.13: Poster
Monday, March 22, 1999, 14:00–18:00, Z
Infrared characterisation of Si surfaces and bonded Si wafers — •A. Milekhin1, M. Friedrich1, K. Hiller2, M. Wiemer2, T. Ge"sner2, and D.R.T. Zahn1 — 1Institut f"ur Physik, Technische Universit"at, D-09107 Chemnitz — 2TU Chemnitz, Zentrum f"ur Mikrotechnologien, D-09107 Chemnitz
We present the systematic infrared (IR) spectroscopical investigation of hydrophobic and hydrophilic Si surfaces and buried interfaces in bonded Si wafers. The as-prepared hydrophobic Si (100) surface is terminated by hydrogen, while hydrophilic one exhibits O-Si-H complexes. Aging leads to partial oxidation of hydrophobic Si surface, while hydrophilic ones are more stable in air. The influence of different chemical treatments and an annealing process on the chemical nature of the surface was also investigated. The results of the spectroscopical study of Si surfaces allow the contributions of the outer surfaces and buried interfaces to be distinguished. The IR spectra of Si wafers bonded at elevated and room temperatures reveal the distinct of the buried interfaces. The rearrangement of atoms at the buried interface via annealing at different temperatures observed in in the IR spectra is discussed.