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Münster 1999 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 12: Poster I

HL 12.33: Poster

Montag, 22. März 1999, 14:00–18:00, Z

Cross-polarized reflectance difference spectroscopy on CuPt ordered AlxGa1−xInP — •Tino Hofmann1, Mathias Schubert1, Bernd Rheinländer1, Ines Pietzonka2, and Volker Gottschalch21Fakultät für Physik und Geowissenschaften, Halbleiterphysik, Universität Leipzig, Linnestraße 5, D-04103 Leipzig — 2Fakultät für Chemie und Mineralogie, Halbleiterchemie, Universität Leipzig, Linnestraße 3, D-04103 Leipzig

We use a cross-polarized modulated reflectance difference technique (cRDS)

at oblique angle of incidence as novel approach for non-destructive

determination of birefringence and zone-center transition energies in

spontaneously ordered AlGaInP thin films. This internal modulation

technique allows characterization of extremely weak anisotropy in thin-

film heterostrutures. The cRDS data are directly proportional to the

sample birefringence, and do not rely on the normal incidence setup

necessary for standard RDS. The effect of this differential technique

is to quench the strong on-diagonal reflectivity, and to accomplish the

sample itself as polarization modulator. A detailed description of this

technique will be given. We also report the anisotropic Seraphin

coefficients for CuPt-ordered compounds.

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