Münster 1999 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 12: Poster I

HL 12.8: Poster

Montag, 22. März 1999, 14:00–18:00, Z

A Light Scattering Study of Crystallisation of Amorphous Si Induced by Au during Annealing — •Qing Huang, Stephan Pietzonka, and Rainer G. Ulbrich — IV. Physikalisches Institut, Universität Göttingen, Bunsenstraße 13-15, 37073 Göttingen

Au-induced crystallisation of amorphous Si during annealing at different temperatures (450-620K) was observed in-situ by Raman scattering (RS). The crystalline Si LO phonon line at 520cm⁻¹ appeared during annealing, resulting from nucleating c-Si crystallites. The crystallisation is proved to be isokinetic and can be described in the JMA (John-Mehl-Avrami) model. In spectral analysis, we obtain information on the Si crystallite correlation size, shape and orientation. By comparing experimental data with our simulation of line profiles, we show that the crystallite correlation sizes are 5-10 nm and that the best fit is achieved with the assumption of cylindrical shapes, especially in the thin Au film case. The experimental LO frequencies are a little higher than that of the simulation, which is explained as an effect of stress exerted on the crystallites after annealing. Additionally, we did angle-dependent Raman scattering measurement to investigate the orientations of the crystallites, and we confirm that the c-Si crystallites are randomly oriented.