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HL: Halbleiterphysik

HL 17: Quantenpunkte und Quantendr
ähte II

HL 17.3: Vortrag

Dienstag, 23. März 1999, 11:00–11:15, H4

Photoluminescence of InAs quantum dots grown by SMEE on GaAs misorientated surfaces — •R.B. Iouferev^1,2, B.V. Novikov², S.Yu. Verbin², A. Golombek¹, R. Goldhahn¹, G. Gobsch¹, G.E. Cirlin³, V.G. Dubrovskii³, and V.N. Petrov³ — ¹Technische Universität Ilmenau, Institut für Physik — ²Institute of Physics, St.Petersburg University, 198904 Peterhof, Russia — ³Institute for Analytical Instrumentation of RAS, 198103 St.Petersburg, Russia
In this paper we present photoluminescence (PL) results of self-organised InAs/GaAs quantum dot (QD) arrays grown on vicinal GaAs (100) substrate by means of submonolayer migration enhanced epitaxy (SMEE) technique. The mean InAs thickness of samples varies between 1.8 and 3 monolayers.

The energy of the QD PL maxima as function of misorientation angle between (100) surface and [001] direction (0...7 degrees) shifts gradually from 1.25 to 1.37eV. Simultaneously, the full width at half maximum (FWHW) of the emission band decreases from 95 to 33meV. By increasing temperature from 4.2 to 80K a reduction of the emission band intensity is indicated. Furthermore, at T>80K two bands with longer wavelength are clearly resolved.

The results are discussed within a model taking into account emission from both lowest and excited QD levels.