Münster 1999 – scientific programme

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HL: Halbleiterphysik

HL 19: Symposium: Organische Halbleiterbauelemente

HL 19.5: Fachvortrag

Tuesday, March 23, 1999, 18:20–18:55, H1

High-Mobility Polymer Field-Effect Transistors for Integrated Optoelectronic Devices — •H. Sirringhaus, N. Tessler, P.J. Brown, and R.H. Friend — Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE, UK

We will review recent progress in the device performance of solution-processed conjugated polymer field-effect transistors (FETs). Using regioregular poly-3-hexylthiophene as the active layer field-effect mobilities of 0.05-0.1 cm²/Vs and ON-OFF current ratios of 106-108 have been demonstrated. The performance approaches that of amorphous silicon transistors and has enabled us to demonstrate the ability of polymer FETs to supply sufficient current to drive an integrated polymer LED. Reaching a mobility of 0.1 cm²/Vs with a microcrystalline conjugated polymer raises interesting questions about the transport mechanism and the nature of the charge transporting carriers. We will present temperature dependent mobility measurements in combination with electrooptical charge modulation spectroscopy.