Münster 1999 – scientific programme

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HL: Halbleiterphysik

HL 22: Quantenpunkte und Quantendr
ähte III

HL 22.9: Talk

Tuesday, March 23, 1999, 18:00–18:15, H4

Spectroscopic and microscopic measurements of self-organized InAs nanocrystals — •S. Heun¹, Th. Schmidt¹, K. C. Prince¹, and Y. Watanabe² — ¹Sincrotrone Trieste, Basovizza, 34012 Trieste, Italy — ²NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01 Japan

First spectromicroscopic measurements of self-organized InAs nanocrystals by soft x-ray photoemission electron microscopy (XPEEM) are presented. The InAs nanocrystals were fabricated on Se-terminated GaAs(100) surfaces by molecular beam epitaxy (MBE) in Tsukuba, Japan. Measurements were performed with the SPELEEM (Spectroscopic Photo Emission and Low Energy Electron Microscope) of the Technical University of Clausthal at beamline 6.2LL of the synchrotron radiation light source ELETTRA in Trieste, Italy. The samples were protected by As capping layer deposited in-situ in the MBE chamber during transfer in air to ELETTRA. The capping layer was desorbed in the SPELEEM sample preparation chamber. We performed tests on As-capping and decapping of InAs nanocrystals by conventional synchrotron radiation photoelectron spectroscopy at the Photon Factory in Tsukuba, Japan. We found that the electronic and the structural properties of the samples were not changed by capping and decapping. Low energy electron microscopy (LEEM) and XPEEM measurements performed with the SPELEEM proved the feasibility of spectromicroscopic experiments on single nanocrystals.