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Münster 1999 – scientific programme

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HL: Halbleiterphysik

HL 23: Poster II

HL 23.10: Poster

Wednesday, March 24, 1999, 14:00–18:00, Z

Exciton recombination dynamics in GaAs/InGaP multiple quantum wells — •C. Rudamas and J. Martinez-Pastor — Departamento de Física Aplicada, Universidad de Valencia, C./ Dr. Moliner 50, 46100 Burjassot (Valencia), Spain

During the last years, a great deal of effort has been placed on the study of the GaAs/InGaP system as an alternative to GaAs/AlGaAs for the fabrication of electronic and optoelectronic devices. The reasons are well understood, InGaP exhibits a much lower concentration of deep levels than AlGaAs and does not oxidize as readily as the latter.
In this work, the dynamics of the exciton decay in GaAs/InxGa1−xP multiple quantum wells (MQWs) has been studied by means of time resolved photoluminescence (TRPL) as a function of the temperature, the well thickness and the composition of the barriers. The MQW samples were grown by atomic layer molecular beam epitaxy. The In-content of the barriers ranges between 0.43 and 0.54.
A monotonic decrease of the decay time with raising temperature is experimentally observed, even at low temperatures. This behavior, characteristic of the activation of nonradiative recombination channels, could be attributed to interface defects and compositional fluctuations in the MQWs studied here. This is in agreement with results obtained from measurements of similar kind of samples [1]. Small values of the valence band offset as well as a decrease of them could also be deduced from the experimental results when the In-content of the barriers is reduced. This is still in controversy in the literature.

[1] J. Martínez-Pastor, L. González, G. Aragón, Ch. Guenaud and E. Delaporte, to be published in J. Appl. Phys., 84, Number 11 (1998)

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