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Münster 1999 – scientific programme

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HL: Halbleiterphysik

HL 23: Poster II

HL 23.72: Poster

Wednesday, March 24, 1999, 14:00–18:00, Z

Angle Resolved Photoemission Spectroscopy of GaN(1010): Experiment and Theory — •L. Tarcak1, J. Wichert1, R. Weber1, L. Kipp1, M. Skibowski1, T. Strasser2, F. Starrost2, C. Solterbeck2, W. Schattke2, T. Suski3, I. Grzegory3, and S. Porowski31Institut für Experimentelle und Angewandte Physik, Universität Kiel — 2Institut für Theoretische Physik und Astrophysik, Universität Kiel — 3UNIPRESS, Polish Academy of Science, 01-142 Warszawa, Poland

In recent years photoemission studies of GaN concentrated on epitaxially grown samples. The aim of this work was the determination of the electronic structure of the non-polar wurtzite GaN(1010)-surface. The samples of GaN single crystals grown by high pressure, high temperature synthesis were cleaved under ultra high vacuum conditions. For the measurements we used synchrotron radiation of a SX 700-monochromator and a 3m-normal incidence monochromator in the energy range from 10eV-150eV at HASYLAB. The surface and bulk valence band structure was examined in normal emission along Γ M and in off-normal emission along Γ X and Γ X. Theoretical photocurrent calculations within the highly accurate one-step model were performed. For the calculations the surface model by Neugebauer et al. [1] was used. The results were analysed with respect to matrix elements, density of states and direct transitions. Comparing theoretical and experimental photocurrents we could identify the valence band maximum as well as emissions from surface states and resonances near the upper and lower valence band edge.
This work was supported by BMBF project no. 05 SE8 FKA and 05 SB8 FKB.

[1] J. E. Northrup, J. Neugebauer, Phys. Rev. B 53(16), R10477 (1996)

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