Münster 1999 – scientific programme

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HL: Halbleiterphysik

HL 23: Poster II

HL 23.79: Poster

Wednesday, March 24, 1999, 14:00–18:00, Z

CL-analysis of the cleaved facets of ZnSe p-n junction — •Cunrang Wang, Donat Josef As, Brigitte Buda, Martin Lübbers, Jürgen Mimkes, Detlef Schikora, and Klaus Lischka — Universität GH Paderborn, FB-6 Physik, Warburger Str. 100, D- 33095 Paderborn

ZnSe photon diode formed on the (100) GaAs substrate by molecular beam epitaxy (MBE) was investigated by cathodoluminescence at temperature between 50K and 300K. On cleaved facets panchromatic CL image showed three different regions at room temperature and could been explained by the carrier generation volume and band diagram calculation. At 50 K the panchromatic CL image displayed an interesting appearance. The CL scanning lines recorded at different photon energies corresponding to the dominated emission peaks in the p-type and n- type ZnSe, respectively, were discussed in details. Taking into account of surface recombination, carriers generation volume, carriers diffusion, internal built-in electric field and carrier drift we could qualitatively explain both panchromatic and photon energy selective CL measurements. The carrier dynamics and recombination process in p-n junction were clearly revealed. The carrier diffusion lengths were estimated to be greater than 0.2 µm in the n- type region and 0.95 µm in the p- type region at 50 K.