Münster 1999 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 23: Poster II

HL 23.82: Poster

Mittwoch, 24. März 1999, 14:00–18:00, Z

Van der Waals epitaxie: growth of binary and ternary molybdenum dichalcogenides — •Th. B"oker, R. Severin, T. Stemmler, C. Janowitz, and R. Manzke — Inst. f. Physik, Humboldt-Universit"at zu Berlin, Invalidenstraße 110, D-10115 Berlin

Van der Waals epitaxy (vdWe) is a different type of molecular beam epitaxy first introduced by Koma et al.[1]. In the new aperture described here pure molybdenum and the chalcogenes Se, Te can be evaporated with an electron beam evaporator and two Knudsen-cells, respectively. The growth process can be directly monitored by means of a selfbuild RHEED system.

The crystal structure of the semiconducting molybdenum dichalcogenides results from the stacking of sheets of hexagonally packed atoms in the sequence X-Mo-X X-Mo-X. Thin films of binary (MoX₂; X=Se, Te) and ternary (MoSe_xTe_2−x; x=0...2) compounds have been grown on a MoS₂ substrate. The electronic and structural properties have been studied in the context of a photovoltaic application by means of angular resolved photoemission spectroscopy (ARPES), LEED, Auger spectroscopy and Kelvin probe measurements to determine the work function.

This work has been suported by the BMBF under project number 05 SEKHA 9.

[1] A. Koma, et al., J. Vac. Sci. Technol. B 3(2), 724 (1984)