Münster 1999 – scientific programme
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HL: Halbleiterphysik
HL 45: Störstellen
HL 45.2: Talk
Friday, March 26, 1999, 09:45–10:00, H4
Diffusion and passivating effect of ion-implanted hydrogen in p-type silicon carbide — •Norbert Achtziger1, Christian Hülsen1, Wolfgang Witthuhn1, M.K. Linnarsson2, M. Janson2, and B.G. Svensson2 — 1Institut für Festkörperphysik, Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany — 2Royal Institute of Technology, Solid State Electronics, Electrum 229, S-16440 Kista-Stockholm
The diffusion and passivating effect of hydrogen in SiC are
studied in epitaxial layers of p-type SiC. Loading with
hydrogen (1H or 2H) is done by low-energy ion implantation
(energy in the order of 300 eV per atom) to minimize the
creation of implantation defects which are known to trap
hydrogen effectively. The electrically active dopants B and Al
are characterized by CV profiling and admittance spectroscopy on
Schottky diodes; deep levels are monitored by DLTS. For several
2H-passivated samples, the chemical hydrogen profile is measured
by SIMS; it correlates well with the depth profile of passivated
acceptors derived from the CV-measurements [1]. Hydrogen
diffusion on a micrometer scale occurs already at room
temperature. Depending on implantation temperature (300...680 K)
and acceptor concentration, either a nearly homogenous partial
passivation or a step-like profile of completely passivated
acceptors is detected. In the latter case, a reduction of the
net acceptor concentration by up to 3 orders of magnitude occurs.
There is also a passivation of the deep level known as D-center
with a thermal stability exceeding 600 K.
[1] N.Achtziger, J.Grillenberger, W.Witthuhn, M.K.Linnarsson,
M.Janson, and B.G.Svensson, Appl. Phys. Lett. 73(7), 945 (1998)