Münster 1999 – scientific programme

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O: Oberflächenphysik

O 11: Poster (I)

O 11.38: Poster

Monday, March 22, 1999, 19:30–22:30, Aula

Studies on the interface formation between layered semiconductors HfS₂ and WSe₂ — •S. Werth, C. Kreis, M. Traving, R. Adelung, L. Kipp, and M. Skibowski — Institut f"ur Experimentelle und Angewandte Physik, Universit"at Kiel, D-24118 Kiel

Thin epitaxial films of HfS₂ were prepared on air cleaved and heated WSe₂ substrates. Using angle resolved photoemission spectroscopy (ARPES) we studied the change of the electronic structure from the clean WSe₂ substrate to the epitaxially grown HfS₂ overlayer. A distinct k_∥ dispersion of the electronic states of HfS₂ was found before the first monolayer of HfS₂ was completed. Combining ARPES with X–ray photoemission spectroscopy we determined the valence band maxima of the different materials and the valence band offset of the corresponding interface. Geometrical properties of the epitaxial films were examined by in situ low energy electron diffraction and scanning tunneling microscopy.

This work was supported by the BMBF project 05 SE8FKA.