Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Oberflächenphysik

O 11: Poster (I)

O 11.42: Poster

Montag, 22. März 1999, 19:30–22:30, Aula

Structure and electronic properties of rare earth - germanium - surface compounds — •Ralf Seidel¹, Serguei L. Molodtsov¹, Manuel Richter², Thomas Gantz¹, and Clemens Laubschat¹ — ¹Institut f"ur Oberfl"achenphysik und Mikrostrukturphysik, TU Dresden, 01062 Dresden — ²Institut f"ur Theor. Phys., TU Dresden, 01062 Dresden

We report on an angle-resolved photoemission spectroscopy (ARPES) and low-energy electron diffraction (LEED) study of Dy-Ge compounds grown epitaxially on Ge(111). Two different phases for thick and thin films were found. We got a √3×√3R30^∘ LEED-pattern for thick films, which is also obtained in the case of epitaxially grown RE-silicides. However, from a comparision of the PE data with LDA-LCAO band structure calculations, a different crystal strcture as the R₃Si₅ structure of the RE-silicides is concluded. Simple structure-formation models and possible explanations of this behaviour will be discussed.