Münster 1999 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Oberflächenphysik

O 40: Elektronische Struktur (Experiment und Theorie) (IV)

O 40.8: Vortrag

Freitag, 26. März 1999, 13:00–13:15, S1

Thin films of Dysprosium and Lanthanum on Silicon (111) – Structural and Electronic Investigations — •Thorsten Rößler¹, Thomas Gantz¹, Helge Rosner², and Clemens Laubschat¹ — ¹Institut für Oberfl"achenphysik und Mikrostrukturphysik, TU Dresden, 01062 Dresden — ²Institut für Theoretische Physik, TU Dresden, 01062 Dresden

We report on structural and electronic investigations of thin epitaxial surface compounds of rare earth elements (La, Dy) with Si(111). The in situ– prepared orderd layers reveal √3×√3 R30^∘ LEED-patterns, which allows together with band structure measurements to identify the structure as AlB₂- type silicides with periodic silicon vacancies in the basal planes. Angle resolved photoemission measurements, performed with synchrotron radiation at BESSY are in satisfactory agreement with the theoretical LDA-LCAO band structure calculations. We discuss the influence of the greater elementary cell on the back folding of the bands in the electronic structure and the influence of different approaches of momentum determination for the comparison of experimental and theoretical results.