Münster 1999 – wissenschaftliches Programm
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O: Oberflächenphysik
O 9: Elektronische Struktur (Experiment und Theorie) (I)
O 9.2: Vortrag
Montag, 22. März 1999, 16:30–16:45, S1
Characterization of cubic InN films by core and valence level photoemission — •C.-H. Chen2, Th. Frey1, A. P. Lima*1, D. Schikora1, L. Aballe2, and K. Horn2 — 1Fachbereich Physik, Universität/GHS Paderborn — 2Fritz-Haber-Institut der MPG, Berlin
The group-III nitrides have recently attracted enormous attention because of their physical and chemical properties which hold the promise for realizing optoelectronic devices which cover the entire visible and the near-uv spectrum. Work has concentrated so far mainly on GaN, AlN and their ternary alloys with indium, but to a much lesser extent on pure InN. Recently, the growth of cubic InN by plasma-assisted molecular beam epitaxy has been demonstrated through RHEED and Raman spectroscopy experiments [1]. We have studied the valence electronic structure and the core level spectrum of cubic InN(100) grown on InAs by photoelectron spectroscopy using synchrotron radiation. The samples exhibit a LEED pattern characteristic of a cubic (100) surface, and the photoemission data show dispersing peaks in the valence band region which can be interpreted in terms of direct transitions between bulk bands; they are discussed in terms of bulk band structure calculations for this material. The determination of precise In 4d and N 1s binding energies offers the possibility to study band offsets between cubic InN and various substrate materials.
[1] A.Tabata, A.P.Lima, L.K.Teles, L.M.R.Scolfaro, J.R.Leite, V.Lemos, B.Schöttker, T.Frey, D.Schikora, and K.Lischka, Appl.Phys.Lett., in press.
[*] on leave from Universidade de Sao Paulo, Instituto de Fisica, Sao Paulo, Brazil