Bonn 2000 – wissenschaftliches Programm
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P: Plasmaphysik
P 18: Plasmatechnologie (Poster)
P 18.1: Poster
Mittwoch, 5. April 2000, 10:30–13:00, Aula
A New Chemistry for Plasma Etching of Antireflective Coatings — •Harald Richter1, Ilona Juergensen1, Andre Wolff1, Maik Stegemann2, and Stephan Wege2 — 1IHP, Walter-Korsing-Str. 2, 15230 Frankfurt (Oder) — 2Infineon Technologies Dresden, Koenigsbruecker Str. 180, 01099 Dresden
In order to meet the linewidth control tolerances required for quarter micron lithography, antireflective coatings (ARC) were introduced into advanced CMOS technologies. Here, we show plasma etching results of such organic antireflection layers using a new etch chemistry. With our pattern transfer process in a N2/H2 plasma, disadvantages of commonly used chemistries for ARC etch include N2/O2, Cl2/O2 or F-based plasmas were overcome. The advantages of the new process are as follows. First, the selectivity ARC/DUV resist is greater than 1.5, leading to a reduced photoresist consumption. Second, the selectivities to different underlayers like oxide or nitride are >1:50. Third, taper-free profiles are produced on the top of resist (no faceting). Finally, the loss of critical dimensions (CD) caused by ARC open processes is very small. Even with 30 percent overetch a perceptible lateral etch bias (etch CD - photo CD) is undetectable. Such long overetch periods guarantee complete removal of ARC residues. In summary, the new ARC open plasma etch chemistry simultaneously achieves the stringest requirements of high selectivity and minimal CD loss.