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Q: Quantenoptik

Q 36: Poster: Halbleiterlaser

Q 36.2: Poster

Donnerstag, 6. April 2000, 16:30–19:30, Aula

Modeling wavelength-shift of high-power linear laser-diode arrays — •Thomas Töpfer, Jens Philipps, Joachim Hein, Gisela Quednau, H. Walther, and Roland Sauerbrey — Institut für Optik und Quantenelektronik, Universität Jena, Max-Wien-Platz 1, 07743 Jena

Commercially available InGaAs-quantum-well laser-diode-bars to be employed as pump sources in high power amplifier systems were examined concerning their output characteristics in pulsed operation. Operation at extremely high currents causes strong heating in the active layer of the semiconductor, leading to a red-shift of emitted frequency and to drop in output power due to decrease in efficiency at higher temperatures. Both effects can be described to first order as linear dependent on temperature. Time-resolved analysis of laser diode output spectra delivers detailed information on temperature evolution of the junction and heat removal. The model is based on a one-dimensional linear heat flow into a semi-infinite solid with radiation at the surface into the medium. Data traces can be fit to an error function as solution of the model, with fit parameters giving evidence for quality of heat sink design and mounting technology.