Regensburg 2000 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 13: Nanostrukturen

DS 13.3: Fachvortrag

Dienstag, 28. März 2000, 15:30–15:45, H31

SFM-characterization and switching behavior of nanodomains in ferroelectric thin films — •Catalin Harnagea, Alain Pignolet, Marin Alexe, Dietrich Hesse, and Urlich Goesele — Max-Planck-Institut fuer Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale

The future integration of ferroelectric materials into silicon technology will have to face submicron ferroelectric structures, most probably even with features of nanometric size. It is therefore a fundamental question to know whether structures of nanometric sizes made out of ferroelectric materials are still holding ferroelectric and piezoelectric properties and how these properties are scaling down with size. Using the so-called piezoresponse mode of scanning force microscopy (SFM), the local state of polarization and electromechanical properties were obtained by monitoring the vibrations of the film surface induced by a small testing AC voltage. Both components of polarization, perpendicular and parallel to the film surface, can be deduced by detecting the out-of-plane and in-plane oscillations. Using appropriate investigation procedures the electromechanical properties such as spontaneous polarization, piezoelectric and electrostrictive coefficients, of various ferroelectric thin films (like PZT and bismuth-layered perovskites) were deduced, as well as their spatial distribution with a nanometer resolution. The poling behaviour under external electric field and the switching of nanodomains were observed for each type of ferroelectric materials.