Regensburg 2000 – scientific programme
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DS: Dünne Schichten
DS 25: Metallische Schichten
DS 25.3: Fachvortrag
Wednesday, March 29, 2000, 14:30–14:45, H32
Epitaxial yttrium thin films growth on BaF2 for optical measurements. — •A. Jacob, A. Borgschulte, and J. Schoenes — Institut für Halbleiterphysik und Optik, TU Braunschweig
The discovery of the switchable properties of rare earth hydride thin films [1] opened new possibilities to study the optical properties of hydrides. Obtaining epitaxial yttrium films on substrates which are transparent in a large energy range, without a buffer layer is important for the investigation of the optical properties of single crystalline switchable mirrors. Here we present the epitaxial growth of yttrium-(0001) films on BaF2-(111) substrates by molecular beam epitaxy. The quality of the epitaxial films is controlled during the growth by in-situ Reflection High Energy Electron Diffraction (RHEED) and optical reflection measurements. From these characterisations we observe a Stranski-Krastanov growth mode of yttrium on BaF2.
[1] J.N.Huibert, R.Griessen; J.H.Rector, R.J.Wijngaarden, J.P.Dekker, D.G. de Groot and N.J. Koeman, Nature 380,231 (1996)