Regensburg 2000 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 38: Postersitzung
DS 38.2: Poster
Dienstag, 28. März 2000, 09:30–17:30, Poster B
Formation of amorphous tracks in KTiOPO4 during swift heavy ion implantation. — •Werner Wesch1, Thomas Opfermann1, Thomas Höche2, and Siegfried Klaumünzer3 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien Platz 1, 07743 Jena — 2Friedrich-Schiller-Universität Jena, Institut für Glaschemie, Fraunhofergasse 6, 07743 Jena — 3Hahn-Meitner-Institut, Glienicker Str.100, 14109 Berlin
Structural damages in KTiOPO4 (KTP) single crystals caused by swift Kr- and Xe-ions at room temperature were studied by a combination of XTEM and RBS. Z-cut flux grown KTP crystals were implanted with 150 MeV Kr-ions at ion fluences between 3x1011cm−2 and 4x1012cm−2 and with 250 MeV Xe-ions at an ion fluence of 3x1012cm−2.
An ion fluence dependent damage production is observed in the region of dominating electronic excitation. At low ion fluences, well-separated amorphous latent tracks with diameters of about 10 nm were observed within a superficial layer. Track diameters decrease with increasing depth z until z = 16 µm, and in larger depths no tracks are detectable. By increasing the ion fluence, a successive track accumulation leads to the formation of a continuos amorphous layer.
The fluence dependence of the damage evolution as monitored by RBS can be described in the framework of the overlap damage model introduced by Gibbons under the assumption that single tracks do not overlap. The track diameter derived from this model is in excellent agreement with that determined by XTEM. Complete amorphisation is accompanied by a swelling of the implanted layer (about + 4 %).