Regensburg 2000 – scientific programme
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DS: Dünne Schichten
DS 38: Postersitzung
DS 38.47: Poster
Tuesday, March 28, 2000, 09:30–17:30, Poster B
Non-destructive Analysis of Oxide Layer Thickness of Si Wafer Bonds — •C. C. Himcinschi1, A. Milekhin1,2, M. Friedrich1, K. Hiller3, M. Wiemer3, T. Gessner3, and D.R.T. Zahn1 — 1Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany — 2Institute of Semiconductor Physics, 630090 Novosibirsk, Russia — 3Zentrum für Mikrotechnologien, Technische Universität Chemnitz, D-09107 Chemnitz, Germany
We present a study of Si wafers bonded at different temperatures (20oC - 1100oC) using infrared (IR) spectroscopy and ellipsometry. The analysis of the IR spectra of bonds in the spectral range of the SiO2 optical phonons shows the increase of oxide layer thickness when the bonding temperature increases. In order to distinguish the contribution of the surface oxide in IR spectra additional ellipsometric measurements were performed. The structural parameters (oxide thickness, refractive index) obtained were used in a model of multilayered structure for the fitting procedure of IR transmittance. The changes of the atomic arrangement at the interface of Si wafer bonds evidenced by IR spectroscopy are discussed.